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On September 6, 2026, the source LaidBackDev_ revealed images of the Qualcomm sixth-generation Snapdragon 8 Elite Extreme Gen 6 (model SM8975) on the X platform. The package area of this chip has increased compared to the fifth-generation version; the additional space is used primarily for optimizing the heat dissipation structure rather than simply expanding the computing units. The DRAM has been moved from the top of the SoC to the side, and a concept similar to Samsung’s Exynos 2600’s Heat Path Block (HPB) has been adopted. Copper-based heat dissipation blocks are used to directly contact the application processor to conduct heat, aiming to reduce heat accumulation between the memory and the SoC and improve the high-frequency operation time of the CPU and GPU. The chip identification shows “SM8975” and “101-BC”. Based on this, technology media Wccftech believes that this version is expected to support LPDDR5X memory and not LPDDR6.
消息源@LaidBackDev_于 9 月 6 日在 X 平台曝光高通第六代骁龙 8 超级至尊版（Snapdragon 8 Elite Extreme Gen 6，型号 SM8975）实物图。该芯片封装面积大于第五代骁龙 8 至尊版，新增空间主要用于散热结构而非单纯扩大计算单元。其将 DRAM 从 SoC 顶部移至侧边并加入散热片，采用类似三星 Exynos 2600 的 Heat Path Block（HPB）思路，利用铜基散热块直接接触应用处理器以传导热量。科技媒体 Wccftech 认为此举可降低内存与 SoC 间热量累积，提升 CPU 和 GPU 高频运行时长。芯片标识显示"SM8975"和"101-BC"，Wccftech 据此判断该版本预计支持 LPDDR5X 内存，不采用 LPDDR6。