EVENT DOSSIER
To overcome the limitations of EUV lithography in reducing mask size and performing stitching, ASML and TSMC have jointly launched an industry initiative to promote the use of 12-inch photomasks. The plan aims to improve wafer fab productivity by restoring a complete exposure field, meeting the demand for chips at smaller process nodes driven by AI. Currently, 6-inch masks are still used for EUV with high numerical aperture, but both companies plan to establish a 12-inch photomask pilot production line by 2031 and prepare corresponding lithography systems for advanced process production by 2033. Intel and Samsung have expressed their support for this transition.
ASML 与 TSMC 发起行业倡议，推动采用 12 英寸光掩模以降低成本并克服高数值孔径 EUV 光刻技术局限。该合作计划于 2031 年前建立 12 英寸光掩模试点产线，并于 2033 年前准备好配套光刻系统投入先进制程生产。英特尔和三星已表态支持此转型，旨在解决因 ASML 第一代高数值孔径 EUV 机采用各向异性光学设计而导致的掩膜图案缩小及拼接问题。目前高数值孔径 EUV 初期将沿用 6 英寸掩模，但转向 12 英寸掩模可恢复完整曝光场，提升晶圆厂生产力并满足 AI 驱动下更小制程节点对芯片的需求。