EVENT DOSSIER
ASML announced its cooperation with Samsung Electronics and TSMC to transition High NA EUV lithography patterning systems from 6-inch masks to 12-inch masks. Samsung Electronics confirmed its plan to apply this technology to the mass production of advanced DRAM memory by 2028; TSMC plans to introduce High NA EUV into the mass production of advanced logic processes starting in 2031. All parties plan to build a 12-inch mask pilot line by 2031, preparing for production in High NA EUV advanced processes by 2033. The goal is to improve machine efficiency, reduce manufacturing costs, and address the “half-feld” splicing issue.
ASML 宣布与三星电子、台积电合作推动 High NA EUV 光刻图案化系统从 6 英寸过渡至 12 英寸掩膜。三星电子确认计划于 2028 年将该技术用于先进 DRAM 内存的大规模生产，台积电则计划从 2031 年开始向先进逻辑制程量产中导入 High NA EUV。各方计划在 2031 年前建设 12 英寸掩膜试点线，为其于 2033 年在 High NA EUV 先进制程中投产做好准备，旨在提升机台生产效率、降低制造成本并化解“半场”拼接问题。