EVENT DOSSIER
On September 8, 2026, Yaoxin Microelectronics announced the launch of the world’s first silicon carbide super-junction MOSFET. The product was developed through a collaborative effort between Professor Hao Yue’s team at Xidian University and the wafer fabrication company Xinlian Integration. The first batch of customers will be targeted at applications in high-voltage DC power supply systems for data centers with stringent requirements for power density, as well as AI server power supplies.
瑶芯微电子发布全球首款碳化硅超级结 MOSFET。该产品由西安电子科技大学郝跃团队与芯联集成协同开发，攻克多层外延及兆电子伏特离子注入等难题，实现 1635V 超高耐压、导通电阻低至 1.27 毫欧·平方厘米及功率密度提升 81% 的性能突破。首批客户将面向数据中心高压直流供电系统及 AI 服务器电源等领域。该器件通过车规级 AEC-Q101 认证，标志着中国厂商在碳化硅下一代技术竞争中实现原创突破。