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A Unified Physics-Aware Quantum Machine Learning Framework across Power GaN HEMTs and Logic Nanowire FETs: Predicting Unseen Process Splits and Held-Out Geometry Combinations with Lower Error and Tighter Split-to-Split Variability

2026-09-07 12:00 Science 🔥 40.2 heat score
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The researchers proposed a unified physical-sensing quantum machine learning framework aimed at handling both power gallium nitride high electron mobility transistors (GaN HEMT) and logic nanowire field-effect transistors (FET). This framework achieves lower prediction errors and tighter inter-split variations compared to existing methods by predicting unknown process split combinations and retaining geometric shape combinations.

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A arXiv cs.AI en 2026-09-07 12:00

A Unified Physics-Aware Quantum Machine Learning Framework across Power GaN HEMTs and Logic Nanowire FETs: Predicting Unseen Process Splits and Held-Out Geometry Combinations with Lower Error and Tighter Split-to-Split Variability

研究人员提出了一种统一的强化学习框架,用于在数据稀缺条件下发现紧凑的参数化量子电路以进行器件建模。该框架利用图神经网络策略结合近端策略优化算法,基于留一组交叉验证误差来搜索电路架构。实验结果显示,该框架在所有 11 个目标指标上均优于六个经典基线,其中对 HEMT 器件实现了 59% 的更低误差和 81% 更紧的折变异性,对 NWFET 器件实现了 84% 的更低误差和 82% 更紧的折变异性。这些结果证明了强化学习选择的、经经典模拟的参数化量子电路可作为具有低未见数据误差和改进物理一致性的紧凑替代模型,尽管其未施加任何显式物理约束、惩罚项或特定器件方程。